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Gallium Nitride Homoepitaxial

Ammonothermal gallium nitride gan substrates are the most promising substrates for homoepitaxial growth of gan films having low dislocation density.Growth-induced structural inhomogeneities in these substrates were investigated by high-resolution x-ray topography hr-xrt and high-resolution x-ray diffraction hr-xrd.A one-to-one correlation of defects was observed in.

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